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Gallium antimonide
Names
	IUPAC name Gallium(III) antimonide
	Other names Gallium antimonide
Identifiers
CAS Number	12064-03-8 ;
3D model (JSmol)	Interactive image; Interactive image;
ChemSpider	3436915 ;
ECHA InfoCard	100.031.859
PubChem CID	4227894;
CompTox Dashboard (EPA)	DTXSID70884536 ;
	InChI InChI=1S/Ga.Sb Key: VTGARNNDLOTBET-UHFFFAOYSA-N ; InChI=1/Ga.Sb/rGaSb/c1-2 Key: VTGARNNDLOTBET-KXXLTECTAC;
	SMILES [Ga]#[Sb]; [Ga+3].[Sb-3];
Properties
Chemical formula	GaSb
Molar mass	191.483 g/mol
Density	5.614 g/cm3
Melting point	712 °C (1,314 °F; 985 K)
Solubility in water	insoluble
Band gap	0.726 eV (300 K)
Electron mobility	3000 cm2/(V*s) (300 K)
Thermal conductivity	0.32 W/(cm*K) (300 K)
Refractive index (nD)	3.8
Structure
Crystal structure	Sphalerite, cF8
Space group	F-43m, No. 216
Hazards
NFPA 704 (fire diamond)	1 0 0
Flash point	Non-flammable
Related compounds
Other anions	Gallium nitride; Gallium phosphide; Gallium arsenide
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). verify (what is ?) Infobox references

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm.^[1] It has a room temperature direct bandgap of approximately 0.73 eV.^[1]^[2]^[3]

History

The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide.^[4] The Ga-Sb phase equilibria was investigated in 1955 by Koster^[5] and by Greenfield.^[6]

Applications

GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

References

^ ^a ^b Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156.
^ Dutta, P. S., Bhat, H. L., Kumar, V. (1997). "The physics and technology of gallium antimonide: An emerging optoelectronic material". Journal of Applied Physics. 81 (9): 5821–5870. Bibcode:1997JAP....81.5821D. doi:10.1063/1.365356.
^ Madelung, O., Rössler, U., Schulz, M., eds. (2002). "Gallium antimonide (GaSb), direct energy gap". Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties. Landolt-Börnstein - Group III Condensed Matter. Vol. b. Springer-Verlag. pp. 1–5. doi:10.1007/10832182_229. ISBN 978-3-540-42876-3.
^ Goldschmidt, Victor Moritz (1926). "Geochemische Verteilungsgesetze der Elemente : 7. Die Gesetze der Krystallochemie". Skrifter Norske Videnskaps-Akademi I Oslo (in German). I Kommission Hos Jacob Dybwad: 29.
^ Köster, Werner; Thoma, Berthold (1955-04-01). "Aufbau der Systeme Gallium-Antimon, Gallium-Arsen und Aluminium-Arsen". International Journal of Materials Research. 46 (4): 291–293. Bibcode:1955IJMR...46..291K. doi:10.1515/ijmr-1955-460408. ISSN 2195-8556.
^ Greenfield, I. G.; Smith, R. L. (1955). "Gallium-Antimony System". Transactions AIME. 7 (2): 351–353. Bibcode:1955JOM.....7..351G. doi:10.1007/BF03377506. ISSN 1047-4838.