二碲化锝是一种无机化合物,化学式为TcTe2。它可由碲和锝在高温反应得到。[1]它是一种半导体,根据HSE06计算,块材的1Tdp相的间接带隙为0.37 eV,单层材料增大至1.21 eV。[3]
除了TcTe2外,另一已知的碲化物是Tc6Te15,碲和锝按10:1反应得到。[4]
参考文献
- ^ 1.0 1.1 J.C. Wildervanck, F. Jellinek. The dichalcogenides of technetium and rhenium. Journal of the Less Common Metals. 1971-05, 24 (1): 73–81 [2022-10-12]. doi:10.1016/0022-5088(71)90168-8. (原始内容存档于2018-06-27) (英语).
- ^ Hans Karl Kugler. Gmelin Handbook of Inorganic Chemistry - Te Technetium. Springer-Verlag. 1982 [2022-10-12]. ISBN 978-0-387-93472-3. (原始内容存档于2022-10-17).
- ^ Winda Purwitasari, Rovi Angelo B. Villaos, Ina Marie R. Verzola, Ali Sufyan, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang. High Thermoelectric Performance in 2D Technetium Dichalcogenides TcX 2 (X = S, Se, or Te). ACS Applied Energy Materials. 2022-07-25, 5 (7): 8650–8657 [2022-10-12]. ISSN 2574-0962. doi:10.1021/acsaem.2c01170. (原始内容存档于2022-10-13) (英语).
- ^ Yoshimura, Takashi; Ikai, Takuya; Tooyama, Yuji; Takayama, Tsutomu; Sekine, Tsutomu; Kino, Yasushi; Kirishima, Akira; Sato, Nobuaki; Mitsugashira, Toshiaki; Takahashi, Naruto; Shinohara, Atsushi. Synthesis, Structures, and Properties of New Chalcogenide‐Capped Octahedral Hexatechnetium(III) Complexes [Tc 6 S 8 X 6 ] 4– (X = Br, I), [Tc 6 Se 8 I 2 ], and [Tc 6 Te 15 ]. European Journal of Inorganic Chemistry. March 2010, 2010 (8): 1214–1219. ISSN 1434-1948. doi:10.1002/ejic.200901057. eISSN 1099-0682.
拓展阅读
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锝(I) | |
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锝(III) | |
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锝(IV) | |
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锝(V) | |
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锝(VI) | |
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锝(VII) | |
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非整数价态 | |
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