The nitrides of lanthanum, scandium, and yttrium show semiconducting properties and additionally the lattice structure of YN differs only by 8% from that of gallium nitride. This makes YN a possible buffer layer between a substrate and the GaN layer during GaN crystal growth.
References
CP Kempter; NH Krikorian; JC McGuire (1957). "The Crystal Structure of Yttrium Nitride". The Journal of Physical Chemistry. 61 (9): 1237–1238. doi:10.1021/j150555a023.
De La Cruz, W.; Díaz, J.A.; Mancera, L.; Takeuchi, N.; Soto, G. (November 2003). "Yttrium nitride thin films grown by reactive laser ablation". Journal of Physics and Chemistry of Solids. 64 (11): 2273–2279. Bibcode:2003JPCS...64.2273D. doi:10.1016/S0022-3697(03)00259-2.