BiCMOS

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Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal–oxide–semiconductor) logic gate, into a single integrated circuit.^[1]^[2] In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions.

Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is excellent for constructing large numbers of low-power logic gates. In a BiCMOS process the doping profile and other process features may be tilted to favour either the CMOS or the bipolar devices. For example GlobalFoundries offer a basic 180 nm BiCMOS7WL process and several other BiCMOS processes optimized in various ways.^[3] These processes also include steps for the deposition of precision resistors, and high Q RF inductors and capacitors on-chip, which are not needed in a "pure" CMOS logic design.

BiCMOS is aimed at mixed-signal ICs, such as ADCs and complete software radio systems on a chip that need amplifiers, analog power management circuits, and logic gates on chip. BiCMOS has some advantages in providing digital interfaces. BiCMOS circuits use the characteristics of each type of transistor most appropriately. Generally this means that high current circuits such as on chip power regulators use metal–oxide–semiconductor field-effect transistors (MOSFETs) for efficient control, and 'sea of logic' use conventional CMOS structures, while those portions of specialized very high performance circuits such as ECL dividers and LNAs use bipolar devices. Examples include RF oscillators, bandgap-based references and low-noise circuits.^{[citation needed]}

The SuperSPARC, Pentium and Pentium Pro microprocessors also used BiCMOS, but starting with Pentium II, designed with increasingly smaller (0.35μm) processes and operating at lower voltages, bipolar transistors ceased to offer performance advantages for this sort of application and were removed.^[4]

Disadvantages

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Some of the advantages of CMOS fabrication, for example very low cost in mass production, do not transfer directly to BiCMOS fabrication. An inherent difficulty arises from the fact that optimizing both the BJT and MOS components of the process is impossible without adding many extra fabrication steps and consequently increased process cost and reduced yield. Finally, in the area of high performance logic, BiCMOS may never offer as low a power consumption as a foundry process optimized for CMOS alone, due to the potential for higher standby leakage current.

References

^ Puchner, H. (1996). "5.2 BiCMOS Process Technology". Advanced Process Modeling for VLSI Technology (PhD). Institut für Mikroelektronik, Technischen Universität Wien. TUW-101186.
^ Puchner 1996, 5.2.1 BiCMOS Process Flow
^ "High-performance SiGe BiCMOS solutions" (PDF). Global Foundries. Archived from the original (PDF) on November 30, 2021.
^ Neil H. E. Weste; David Money Harris (2010). CMOS VLSI Design: A Circuits and Systems Perspective (4th ed.). p. 277.

v t e Logic families
MOS technology	PMOS logic NMOS logic Depletion-load NMOS logic (including HMOS) Complementary MOS (CMOS) Pass transistor logic (PTL) Bipolar–CMOS (BiCMOS)
Other technologies	Diode logic Diode–transistor logic (DTL) Open collector (OC) Direct-coupled transistor logic (DCTL) Emitter-coupled logic (ECL) Gunning transceiver logic (GTL) Integrated injection logic (I²L) Resistor–transistor logic (RTL) Transistor–transistor logic (TTL) Current mode logic / Source-coupled logic (CML/SCL)
Types	Static Dynamic Domino logic Four-phase logic

Electronic components

Semiconductor
devices

MOS transistors	Transistor NMOS PMOS BiCMOS BioFET Chemical field-effect transistor (ChemFET) Complementary MOS (CMOS) Depletion-load NMOS Fin field-effect transistor (FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect transistor (MuGFET) Power MOSFET Thin-film transistor (TFT) VMOS UMOS
Other transistors	Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET) Junction Gate FET (JFET) Organic FET (OFET) Light-emitting transistor (LET) Organic LET (OLET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode transistor Unijunction transistor (UJT)
Diodes	Avalanche diode Constant-current diode (CLD, CRD) Gunn diode Laser diode (LD) Light-emitting diode (LED) Organic light-emitting diode (OLED) Photodiode PIN diode Schottky diode Step recovery diode Zener diode
Other devices	Printed electronics Printed circuit board DIAC Heterostructure barrier varactor Integrated circuit (IC) Hybrid integrated circuit Light emitting capacitor (LEC) Memistor Memristor Memtransistor Memory cell Metal-oxide varistor (MOV) Mixed-signal integrated circuit MOS integrated circuit (MOS IC) Organic semiconductor Photodetector Quantum circuit RF CMOS Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Three-dimensional integrated circuit (3D IC) Thyristor Trancitor TRIAC Varicap

Adjustable

Passive

Reactive

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